Photodiodes - Page 112
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Arrays
Description: 400 to 1060 nm Silicon Photodetectors with 10 nA Dark Current
Description: Si APD Array
Description: Silicon PIN Photodiode
Description: Silicon Avalanche Photodiode from 400 to 1100 nm
Description: 320 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.24 A/W
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Description: Silicon PIN Photodiode from 790 to 1050 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 400 pA
Capacitance:
25 to 110 pF
Responsivity/Photosensitivity:
0.03 to 0.55 mA/mW
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Description: 88.3 mm Active Area Photconductive Silicon Photodiode with Die Package
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Description: 2.5 to 6.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 23 nA to 72 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
23 nA to 72 µA
Capacitance:
60 to 750 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
more info
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Description: 900 - 3500 nm, InAs Substrate based on heterostructures IR Detector
Description: Silicon PIN Photodiode Array
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 860 pA
Capacitance:
8.2 to 33 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
more info
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Description: Silicon photodiode from 320 to 1100 nm
1666 - 1680 of 2551 Photodiodes
Photodiode companies
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