Photodiodes - Page 114
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic
Description: 110 µm Diameter Surface Mount InGaAs Photodiode
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
Surface Mount
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Description: Photovoltaic Devices
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: 250 to 1750 nm InGaAs PIN Photodiodes with 1 nA to 1 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Wavelength Range:
250 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA to 1 µA
Responsivity/Photosensitivity:
0.22 to 0.75 A/W
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Description: Pbs Detectors cooled Standard PB27-Series
Description: Silicon PIN Photodiode
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
24 to 33 pA
Capacitance:
32 to 155 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
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Description: Silicon Avalanche Photodiode 905 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
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Description: Silicon PIN photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 30 nA
Responsivity/Photosensitivity:
0.08 to 0.5 A/W
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Description: Silicon PIN Photodiode from 430 to 1100 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Responsivity/Photosensitivity:
0.57 A/W
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Capacitance:
1.8 to 2.2 pF
Responsivity/Photosensitivity:
0.85 to 1.05 A/W
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Description: 0.79 mm Active Area UV Enhanced Silicon Photodiode with Surface Mount Package
Description: High Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages
Description: 1 to 12 µm HgCdTe ambient temperature photoconductive detector
Description: 350 to 1100 nm Silicon Photodetectors with 0.05 to 1 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1 nA
Responsivity/Photosensitivity:
0.19 to 0.55 A/W
Package Type:
Surface Mount
more info
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1696 - 1710 of 2551 Photodiodes
Photodiode companies
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