Photodiodes - Page 107
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Inversion Layer Photodiodes
Description: 850 nm GaAs PIN photodiode
Description: 11.3 mm Photoconductive Solderable Chip Silicon Photodiode with Wire
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Description: 2.4 to 4.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.014 µA to 50 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.014 µA to 50 nA
Capacitance:
8.5 to 11 pF
Responsivity/Photosensitivity:
0.74 A/W
more info
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Description: 400 to 1000 nm Silicon Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
30 to 38 A/W
Package Type:
TO-Can, Surface Mount, Submount, Ceramic
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Description: SILICON QUADRANT PHOTODIODE
Description: Silicon PIN Photodiode from 300 to 1100 nm
Description: 1 mm2 Photodiode in TO-18 Pkg
Description: 190 to 1000 nm Near-Infrared TO-18 Silicon Photoconductive Photodiode
Description: Silicon PIN Photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 1260 to 1620 nm
Description: 16 mm Avlanche Photodiodes with SHV Package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
120 to 1000 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
25 to 35 A/W
Package Type:
Connectorized
more info
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1591 - 1605 of 2551 Photodiodes
Photodiode companies
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