Photodiodes - Page 106

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.10 to 1 nA
Capacitance:
5 to 25 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: EUV & UV Detectors (SXUV & UVG Family)
Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
2 nF
Responsivity/Photosensitivity:
0.09 to 0.115 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 400 to 1000 nm VIS-NIR TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 30 nA
Capacitance:
120 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 780 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
11 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.22 to 0.3 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Chip, Die
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
1.7 µm
Operation Mode:
Photoconductive
Dark Current:
4 µA
Capacitance:
600 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 17.6 x 4 mm Photovoltaic Silicon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
40 to 80 nA
Capacitance:
9000 pF
Responsivity/Photosensitivity:
0.7 A/W
Package Type:
Die
Module:
No
more info
Description: 4x4 Photodiode Array
Photodiode Material:
Silicon
Wavelength Range:
810 nm
Operation Mode:
Photovoltaic
Capacitance:
35 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
8 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 400 to 1100 nm Silicon Photodetectors with 10 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
5 to 10 pF
Package Type:
Leaded
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Selective wavelength photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
600 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 66 pA
Capacitance:
12 to 18 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1150 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
35 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: NIR/Red Enhanced 5 mm2 Photodiode-Preamplifier
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 320 to 1100 nm UV-VIS-NIR Surface Mount Silicon Photoconductive Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
40 to 60 pF
Responsivity/Photosensitivity:
0.6 to 0.72 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 790 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
790 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.8 pF
Responsivity/Photosensitivity:
0.55 to 0.6 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
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