Photodiodes - Page 99
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photovoltaic Devices
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
Ceramic, Chip
more info
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Description: 1.05 mm Active Area Photovoltaic Silicon Photodiode with Die Package
Description: Photops Photodiode-Amplifier Hybrids
Description: 2.5 to 6.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector
Description: 250 to 1100 nm Silicon Photodetectors with 0.5 to 2 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
65 to 190 pF
Responsivity/Photosensitivity:
0.21 to 0.4 A/W
more info
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Selective wavelength photodiode
Description: Silicon photodiode from 320 to 1100 nm
Description: Near IR Reduced Footprint Photodiode
Description: 320 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1.5 nA
Responsivity/Photosensitivity:
0.24 A/W
more info
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Description: Silicon PIN Photodiode from 870 to 1050 nm
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
more info
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Photodiode Material:
InGaAs
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 0.8 nA
Capacitance:
0.3 to 0.7 pF
Responsivity/Photosensitivity:
0.10 to 0.95 A/W
more info
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Description: 11.3 mm Active Area Photconductive Silicon Photodiode with Die Package
1471 - 1485 of 2551 Photodiodes
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