Photodiodes - Page 95

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Back Illuminated InGaAs Photodiode / Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 250 to 1100 nm Silicon Photodetectors with 0.2 to 1 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
70 to 275 pF
Responsivity/Photosensitivity:
0.45 to 0.64 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
600 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.20 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: SILCON QUADRANT PHOTODIODE
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 460 pA
Capacitance:
70 to 480 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
0.6 pF
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 12 mm2 Photodiode in TO-8 Hermetic Pkg
Photodiode Material:
Silicon
Wavelength Range:
450 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 7 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
0.20 to 0.28 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 900 to 1700 nm InGaAs Photodiodes with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
2 nA
Capacitance:
1000 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 480 to 660 nm Visible Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
480 to 660 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 pA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.38 A/W
Package Type:
DIP / DIL / Thru-Hole
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 790 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
790 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
2.05 µm
Operation Mode:
Photoconductive
Dark Current:
10 µA
Capacitance:
1600 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 88 mm Solderable Die Silicon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
90 to 180 nA
Capacitance:
350 pF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Description: Blue Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
436 nm
Operation Mode:
Photovoltaic
Dark Current:
2 nA
Capacitance:
130 pF
Responsivity/Photosensitivity:
0.18 to 0.21 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 3 to 6.7 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
5.2 to 6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.5 to 2.7 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 350 to 1100 nm Silicon Photodetectors with 0.5 to 2 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
42 to 170 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
Package Type:
TO-Can
Module:
No
more info
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