Photodiodes - Page 92
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Description: Broadband Anti-Reflection Coated InGaAs Photodiodes
Photodiode Material:
InGaAs, InP
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Surface Mount
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Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Description: 350 to 1100 nm Quadrant and Array Photodiodes with 3 to 30 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
80 to 330 pF
Responsivity/Photosensitivity:
0.18 to 0.53 A/W
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Description: Silicon, InGaAs Avalanche photodiode from 700 to 1000 nm
Description: UV Enhanced Photo diode
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2.5 to 8 nA
Capacitance:
70 to 465 pF
Responsivity/Photosensitivity:
0.51 to 1.4 A/W
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Description: InGaAs Avalanche Photodiode from 1000 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
9.4 A/W
Package Type:
Surface Mount
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Description: AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
Description: 400 to 1000 nm Si Photodiodes with TO-Can package
Description: 2.75 x5.25mm Silicon PIN Photodiode
Description: 320 to 1000 nm VIS-NIR Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.33 to 0.4 A/W
Package Type:
DIP / DIL / Thru-Hole
more info
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Description: Silicon PIN Photodiode from 640 to 1060 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 200 pA
Responsivity/Photosensitivity:
0.07 to 0.59 mA/mW
more info
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Description: 16 mm Avlanche Photodiodes with 130 pF Capacitance
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
120 to 1000 nm
Operation Mode:
Photovoltaic
Dark Current:
600 to 1200 nA
Responsivity/Photosensitivity:
25 to 35 A/W
Package Type:
Connectorized
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1366 - 1380 of 2551 Photodiodes
Photodiode companies
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