Photodiodes - Page 94

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
8 to 15 nA
Capacitance:
20 to 150 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
20000 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.7 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 350 to 1100 nm Quadrant and Array Photodiodes with 0.5 to 1 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
6.5 to 21 pF
Responsivity/Photosensitivity:
0.38 to 0.55 A/W
Package Type:
Surface Mount
Configuration:
Array
Channels:
Quad
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
700 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA (Reverse)
Capacitance:
6 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 200 pA
Capacitance:
4 to 14 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1150 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 25 nA
Capacitance:
8.5 to 10 pF
Responsivity/Photosensitivity:
0.5 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 15 mm2 Photodiode in TO-5 Hermetic Pkg
Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
4 to 10 nA
Capacitance:
30 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1200 to 2700 nm InGaAs NIR Photodiode with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1200 to 2700 nm
Operation Mode:
Photovoltaic
Dark Current:
3 µA
Capacitance:
17 pF (Terminal)
Responsivity/Photosensitivity:
1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 840 nm Silicon PIN Photodiode for Small Signal Detection
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
700 to 1070 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 5 nA
Capacitance:
4.6 to 11 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 400 pA
Capacitance:
25 to 110 pF
Responsivity/Photosensitivity:
0.03 to 0.55 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 200 nA
Capacitance:
100 to 500 pF
Responsivity/Photosensitivity:
0.10 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 0.3 mm Diameter Active Area InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 50 nA
Capacitance:
6 to 20 pF
Responsivity/Photosensitivity:
0.3 to 0.93 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Blue Enhanced Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
17000 pF
Responsivity/Photosensitivity:
0.15 to 0.20 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.7 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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