Photodiodes - Page 93

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Detector-Filter Combination Series Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photovoltaic
Capacitance:
1500 pF
Responsivity/Photosensitivity:
0.4 to 0.27 A/W
Package Type:
To-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 155Mbps/622Mbps/1.25Gbps/2.5Gbps High Speed InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2
Capacitance:
2 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Type II superlattice, three-stage thermoelectrically cooled, photoconductive detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
6.1 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 400 to 1100 nm Avalanche Photodetectors with Surface Mount Package
Photodetector Type:
Avalanche
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
200 nA (Collector)
Package Type:
Surface Mount, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
40 pA to 80 nA
Capacitance:
871 to 1900 pF
Responsivity/Photosensitivity:
0.90 to 1.10 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
100 nA
Capacitance:
0.35 nF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
Photodiode Material:
Pbse
Wavelength Range:
4.1 to 4.3 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 400 to 1100 nm Si Photodiode Arrays with Surface Mount package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
20 pF (Terminal)
Package Type:
Surface Mount
Configuration:
Array
Module:
No
more info
Description: 3215 Package PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Package Type:
Surface Mount
Module:
No
more info
Description: 400 to 1100 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
0.2 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 790 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
790 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.8 pF
Responsivity/Photosensitivity:
0.55 to 0.6 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Capacitance:
600 to 3000 pF
Responsivity/Photosensitivity:
0.05 to 0.50 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
1 µA
Capacitance:
110 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 100 µm InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
2 to 3 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
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