Photodiodes - Page 89

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 0.8 nA
Capacitance:
0.8 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Blue Enhanced Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
8800 pF
Responsivity/Photosensitivity:
0.15 to 0.20 A/W
Package Type:
Module with Connector
Configuration:
Array
Channels:
Single
Module:
Yes
more info
Description: 2.4 to 5.3 µm InAs and InAsSb two-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
4.5 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 600 to 1750 nm Quadrant and Array Photodiodes with 0.13 nA Dark Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photovoltaic
Dark Current:
0.13 nA
Capacitance:
107 pF
Responsivity/Photosensitivity:
0.55 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Quad
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 100 nA
Capacitance:
750 to 2000 pF
Responsivity/Photosensitivity:
0.02 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
4 pF
Responsivity/Photosensitivity:
0.64 A/W
Package Type:
Chip
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 905 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
20 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
8.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Electron & Photon Detectors (AXUV Family) X-Ray and Radiation
Wavelength Range:
0.01 to 190 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
1 to 3 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 900 to 1700 nm InGaAs Photodiodes with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
35 pF
Responsivity/Photosensitivity:
0.45 to 1.1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 4.8mm Semi-Lens Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
25 pF
Package Type:
Through-Hole
Module:
No
more info
Description: 400 to 1100 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 100 nA
Capacitance:
2.5 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 350 to 1120 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: SMT PIN Photodiode with Vlambda characteristic, very linear ambient light sensor
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 900 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 5 nA
Capacitance:
1000 pF
Responsivity/Photosensitivity:
0.17 A / W(Spectral sensitivity)
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 850 nm GaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.34 to 0.45 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Chip, Die
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 100 nA
Capacitance:
30 to 120 pF
Responsivity/Photosensitivity:
0.10 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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