Photodiodes - Page 87
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Description: 350 to 1100 nm Silicon Photodetectors with 0.5 to 5 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
76 to 300 pF
Responsivity/Photosensitivity:
0.43 to 0.61 A/W
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Description: 400 nm - 1000 nm, Si Avalanche Photodiode for Fluorescence Applications
Description: Red Enchanced Silicon Photodiode
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 1300 pA
Capacitance:
7.8 to 28 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
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Description: Silicon Avalanche Photodiode 905 nm
Description: EUV & UV Detectors (SXUV & UVG Family)
Description: 400 to 1000 nm KP-A Si Avalanche Photodiodes with TO-Can package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 500 pA
Responsivity/Photosensitivity:
0.4 to 0.45 A/W
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Description: High speed and high sensitive PIN photodiode in a standard 3F plastic package.
Description: 320 to 1000 nm Visible Ceramic Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 100 nA
Responsivity/Photosensitivity:
0.24 A/W
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Description: Silicon PIN Photodiode from 430 to 1100 nm
Description: Silicon PIN photodiode from 750 to 1100 nm
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Capacitance:
1.8 to 2.2 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
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Description: 0.1 mm Diameter Active Area InGaAs Photodiode
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
Surface Mount
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Description: Photoconductive Devices
1291 - 1305 of 2551 Photodiodes
Photodiode companies
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