Photodiodes - Page 85

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
320 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
70 to 200 pA
Capacitance:
3.3 pF
Responsivity/Photosensitivity:
85 to 110 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
220 to 360 nm
Operation Mode:
Photoconductive
Dark Current:
0.07 fA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.085 to 0.130 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: UV Enchanced Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 480 pA
Capacitance:
16 to 118 pF
Responsivity/Photosensitivity:
0.14 to 0.51 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1100 nm
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
25 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Through-Hole
Module:
No
more info
Description: EUV & UV Detectors (SXUV & UVG Family)
Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Capacitance:
1.55 to 3 nF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Chip Photodiode with Right Angle Lens
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
2 pF
Package Type:
Surface Mount
Module:
No
more info
Description: 440 to 1100 nm Near-Infrared TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 4 nA
Capacitance:
1.9 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 350 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 10 nA
Capacitance:
30 to 90 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 300 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
300 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.045 to 5 nA
Capacitance:
4.6 pF
Package Type:
Chip, Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.22 to 0.3 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Chip, Die
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
0.1 µA
Capacitance:
21 pF
Responsivity/Photosensitivity:
0.26 to 0.87 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 17.6 x 3.9 mm Solderable Die Silicon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 50 nA
Capacitance:
300 pF
Responsivity/Photosensitivity:
0.62 to 0.7 A/W
Package Type:
Die
Module:
No
more info
Description: Photops Photodiode-Amplifier Hybrids
Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
300 pF
Responsivity/Photosensitivity:
0.10 to 0.14 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
5 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 350 to 1100 nm Silicon Photodetectors with 0.1 to 1 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
20 to 90 pF
Responsivity/Photosensitivity:
0.38 to 0.55 A/W
Package Type:
TO-Can
Module:
No
more info
1261 - 1275 of 2551 Photodiodes
Photodiode companies

Filters

X

Manufacturers from 

Photodetector Type 

Companies 

Photodiode Material 

Package Type 

Operation Mode 

Wavelength Range (nm)  

Capacitance (pF)  

Responsivity/Photosensitivity (A/W)  

Dark Current (nA)  

Channels 

Configuration 

Tags