Photodiodes - Page 81

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Detector-Filter Combination Series Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photovoltaic
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.23 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: 320 to 1000 nm Visible TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 35 nA
Capacitance:
55 pF
Responsivity/Photosensitivity:
0.24 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 780 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 780 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
72 pF
Responsivity/Photosensitivity:
0.7 A/W
Package Type:
DIL, Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 µA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 900 to 1700 nm InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.3 nA
Capacitance:
1.5 to 2 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Tetra-Lateral PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 100 nA
Capacitance:
1625 pF
Responsivity/Photosensitivity:
0.35 to 0.42 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2 to 13 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
8 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 400 to 1100 nm Avalanche Photodetectors wth 0.1 to 1 nA Dark Current
Photodetector Type:
Avalanche
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.80 to 0.85 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 860 pA
Capacitance:
8.2 to 33 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 800 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
0.6 to 0.8 pF
Responsivity/Photosensitivity:
35 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: AP Series - Uncooled PbS Packaged IR Detectors
Photodiode Material:
Pbs
Wavelength Range:
2.2 to 2.4 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2 mm Extended InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
900 to 2200 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
40 µA
Capacitance:
4000 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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