Photodiodes - Page 79

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic, submount
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
2 µm
Operation Mode:
Photovoltaic
Dark Current:
100 µm
Capacitance:
8000 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 42.4 mm Active Area Photconductive Silicon Photodiode with Die Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
950 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
240 pF
Responsivity/Photosensitivity:
0.62 A/W
Package Type:
Die
Module:
No
more info
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
300 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2.4 to 5.3 µm InAs and InAsSb ambient temperature photovoltaic detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
2.9 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 350 to 1100 nm Silicon Photodetectors with 1 to 8 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 8 nA
Capacitance:
40 to 155 pF
Responsivity/Photosensitivity:
0.43 to 0.61 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
0.2 to 3 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs QUADRANT PHOTODIODE
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
208 nF to 80 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: 15 mm2 Photodiode in TO-5 Hermetic Pkg
Photodiode Material:
Silicon
Wavelength Range:
450 nm
Operation Mode:
Photoconductive
Dark Current:
4 to 10 nA
Capacitance:
30 pF
Responsivity/Photosensitivity:
.020 to 0.28 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1 mm InGaAs Quadrant APD Detector
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
25 to 100 nA
Capacitance:
10 to 15 pF
Responsivity/Photosensitivity:
9 to 9.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with TO-Can package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
50 pF (Terminal)
Package Type:
TO-Can
Module:
No
more info
Description: 1.8mm Round Subminiature Silicin PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
5 pF
Package Type:
Surface Mount
Module:
No
more info
Description: 400 to 1100 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 15 nA
Capacitance:
0.5 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
3.6 to 12 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
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