Photodiodes - Page 76

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
1200 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
4 to 10 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
40 to 50 A/W
Package Type:
Surface Mount
Configuration:
Array
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
220 to 360 nm
Operation Mode:
Photoconductive
Dark Current:
0.33 fA
Capacitance:
250 pF
Responsivity/Photosensitivity:
0.085 to 0.130 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
25 to 128 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 100 nA
Capacitance:
2 to 4 pF
Responsivity/Photosensitivity:
4 to 75 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: EUV & UV Detectors (SXUV & UVG Family)
Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Capacitance:
40 nF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 10 mm Ge Photodiode with TO-10 package
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
50 µA
Capacitance:
80 to 135 nF (Junction)
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with TO-Can package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
50 pF (Terminal)
Package Type:
TO-Can
Module:
No
more info
Description: Calibrated Ge Photodiode, 800 - 1800 nm, Ø3.0 mm Active Area
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 4 uA
Capacitance:
3250 to 4000 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 4.8mm Semi-Lens Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon, GaAIAs
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
25 pF
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 25 nA
Capacitance:
13.4 pF
Responsivity/Photosensitivity:
0.34 A/W
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
40 to 200 pF
Responsivity/Photosensitivity:
0.1 to 0.67 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
4 to 15 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 231.6 mm Active Area Photovoltaic Silicon Photodiode with Die Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
950 nm
Operation Mode:
Photovoltaic
Dark Current:
200 nA
Capacitance:
28000 pF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Capacitance:
95 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
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