Photodiodes - Page 73

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
9800 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
Through-Hole
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 750 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 690 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 690 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
120 pF
Responsivity/Photosensitivity:
0.37 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 200 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 20 pA
Capacitance:
4.5 to 33 pF
Responsivity/Photosensitivity:
0.08 to 0.44 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
5 µA
Capacitance:
35000 pF
Responsivity/Photosensitivity:
0.26 to 0.87 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 120 to 1000 nm Avlanche Photodiodes with 16 mm Diameter
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
120 to 1000 nm
Operation Mode:
Photovoltaic
Dark Current:
600 nA
Capacitance:
130 pF
Responsivity/Photosensitivity:
25 to 35 A/W
Package Type:
Connectorized
Module:
No
more info
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 2.5 to 6.5 µm HgCdTe ambient temperature photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
3.4 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.8 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 220 to 358 nm UV Detectors with 0.1 to 10 pA Dark Current
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
220 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 pA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.013 to 0.13 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs Avalanche photodiode from 1000 to 1630 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 15 nA
Capacitance:
0.32 to 0.4 pF
Responsivity/Photosensitivity:
0.85 to 1.05 A/W
Package Type:
Ceramic, Submount, TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
GainAsSb, AlGaAsSb, GaSb
Wavelength Range:
1850 to 2300 nm
Operation Mode:
Photovoltaic
Dark Current:
10 to 60 µA
Capacitance:
50 to 200 pF
Responsivity/Photosensitivity:
0.7 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Avalanched Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Capacitance:
10 to 15 pF
Responsivity/Photosensitivity:
9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
25 nA
Capacitance:
0.18 to 0.30 nF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: BXF Series - Uncooled PbSe Flat Plate IR Detectors
Photodiode Material:
Pbse
Wavelength Range:
3.6 to 3.8 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
160 pA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs Photodiode, 2.5 ns Rise Time, 800-1700 nm, Ø0.5 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
6 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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