Photodiodes - Page 69

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 1000 nA
Capacitance:
35 to 60 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: Silicon PIN Photodiode from 350 to 1120 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 740 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
740 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
72 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
15 µA
Capacitance:
6000 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 60 µm InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.3 nA
Capacitance:
1.5 to 2 pF
Responsivity/Photosensitivity:
0.7 to 0.85 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
40 nA
Capacitance:
30 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
13 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.007 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 220 to 358 nm UV Detectors with 0.1 to 10 pA Dark Current
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
220 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 pA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.013 to 0.13 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon avalanched photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.15 nA
Capacitance:
0.50 pF
Responsivity/Photosensitivity:
0.45 to 0.5 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 50 nA
Capacitance:
1.25 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
TO-Can
Configuration:
Single
more info
Description: BXF Series - Uncooled PbSe Flat Plate IR Detectors
Photodiode Material:
Pbse
Wavelength Range:
3.6 to 3.8 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: TO-Can photodiode from 3.5 to 4.2 µm
Wavelength Range:
3.5 to 4.2 µm
Operation Mode:
Photovoltaic
Dark Current:
15 to 25 mA
Package Type:
TO-Can
Module:
No
more info
Description: 5 mm Large active area InGaAs Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
200 nA
Capacitance:
1.5 nF
Responsivity/Photosensitivity:
0.75 to 0.80 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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