Photodiodes - Page 66

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 4x4 Photodiode Array
Photodiode Material:
Silicon
Wavelength Range:
810 nm
Operation Mode:
Photovoltaic
Capacitance:
35 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
14 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
Description: InGaAs Photodiode, 14 ns Rise Time, 800-1700 nm, Ø2 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
50 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
1.04 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 3mm Photodiode,T-1
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
10 pF
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 590 to 1010 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
590 to 1010 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 3 nA
Package Type:
Chip
Module:
No
more info
Description: 200 to 1000 nm UV-VIS TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 30 nA
Capacitance:
120 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: PIN photodiode from 700 to 1100 nm
Photodetector Type:
PIN
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 50 nA
Capacitance:
13 pF
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.62 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: GaAs PIN photodiode from 830 to 880 nm
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
830 to 880 nm
Operation Mode:
Photoconductive
Dark Current:
2 nA
Capacitance:
1.2 to 1.5 pF
Responsivity/Photosensitivity:
0.4 to 0.5 A/W
Package Type:
Connectorized
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
2.05 µm
Operation Mode:
Photoconductive
Dark Current:
4 µA
Capacitance:
500 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: 220 to 370 nm GaN UV Photodiode with 0.18 A/W Responsitvity
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
220 to 370 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 pA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.18 A/W
Package Type:
TO-Can
Module:
No
more info
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 0.8 nA
Capacitance:
0.8 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1 to 12 µm HgCdTe ambient temperature photoconductive quadrant detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.001 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 105 nA to 120 µA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
105 nA to 120 µA
Capacitance:
75 to 800 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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