Photodiodes - Page 68
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Description: 210 to 355 nm UV Detectors with 10 fA Dark Current
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Selective wavelength photodiode
Description: Silicon photodiode from 400 to 1150 nm
Description: 5 mm2 Photodiode in TO-5 Hermetic Pkg
Description: TO-Can photodiode from 1.65 to 2.35 µm
Description: 1.5 mm InGaAs Quadrant PIN Detector
Description: 650 to 880 nm GaAs Photodiodes with Chip package
Description: Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area
Description: Silicon PIN Photodiode
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Responsivity/Photosensitivity:
0.5 A/W
more info
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