Photodiodes - Page 67

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
3 to 7 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
GaP, AlGaAs, GaAs
Wavelength Range:
890 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 2.5 nA
Capacitance:
590 pF
Responsivity/Photosensitivity:
0.3 to 0.55 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 1200 pA
Capacitance:
50 to 400 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
PCB
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 800 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
50 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 5 mm2 Photodiode in TO-5 Hermetic Pkg
Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: TO-Can photodiode from 2.45 to 3.30 µm
Wavelength Range:
2.45 to 3.30 µm
Operation Mode:
Photovoltaic
Dark Current:
150 to 600 µA
Capacitance:
200 to 300 pF
Responsivity/Photosensitivity:
0.7 to 0.8 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 3 mm Extended InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
900 to 2200 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
100 µA
Capacitance:
8000 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
14 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
Description: InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
1.003 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1206 Package Silicin PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Package Type:
Surface Mount
Module:
No
more info
Description: Silicon PIN photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
2.5 pF
Package Type:
Chip
Module:
No
more info
Description: 266 nm Ultraviolet TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
266 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 10 nA
Capacitance:
11 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 700 to 1070 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
700 to 1070 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 5 nA
Capacitance:
1.8 to 3.8 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 2 nA
Capacitance:
200 to 1000 pF
Responsivity/Photosensitivity:
0.10 to 0.55 mA/mW
Package Type:
Ceramic
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
4 to 8 pF
Responsivity/Photosensitivity:
0.10 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 0.3 mm Diameter Active Area InGaAs Photodiode
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 5 nA
Capacitance:
6 to 8 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
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