Photodiodes - Page 64

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
2000 to 12000 nA
Capacitance:
600 to 1500 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 900 to 1700 nm Back-Illuminated InGaAs Photodiode/Arrays
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.80 to 0.85 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
4 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 40 to 45 µA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
40 to 45 µA
Capacitance:
20 to 160 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 400 nm - 1000 nm, Silicon Avalanche Photodiode for LiDAR Applications
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
290 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Visible light cut photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 100 pA
Capacitance:
25 to 70 pF
Responsivity/Photosensitivity:
0.64 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1150 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
80 to 200 nA
Capacitance:
35 pF
Responsivity/Photosensitivity:
0.44 to 0.70 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Electron & Photon Detectors (AXUV Family) X-Ray and Radiation
Wavelength Range:
0.01 to 190 nm
Operation Mode:
Photovoltaic
Dark Current:
10 nA
Capacitance:
0.04 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: TO-Can photodiode from 2.2 to 3.4 µm
Wavelength Range:
2.2 to 3.4 µm
Operation Mode:
Photovoltaic
Dark Current:
300 to 1000 µA
Capacitance:
800 to 1100 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs Single-Photon Avalanche Diodes (SPADs)
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
0.1 to 0.3 nA
Capacitance:
0.25 pF
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
400 pA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
10 µA
Capacitance:
3000 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1.5mm Side Looking Phototransistor
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photovoltaic
Dark Current:
100 nA
Package Type:
Through-Hole
Module:
No
more info
Description: Silicon PIN photodiode from 440 to 650 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
440 to 650 nm
Operation Mode:
Photoconductive
Dark Current:
30 nA
Capacitance:
1.4 pF
Package Type:
Chip
Module:
No
more info
Description: 0.95 to 1.7 µm Near-Infrared TO-18 InGaAs Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.95 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
150 to 200 nA
Capacitance:
1.5 to 2 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
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