Photodiodes - Page 61
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
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Description: 0.3 mm Diameter InGaAs Photodiode with Surface Mount Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
Surface Mount
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 30 nA
Capacitance:
500 to 1200 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
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Description: 950/1300 nm Dual Sandwich Photodiode for Temperature Sensing Applications
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
more info
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Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 250 nA to 300 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
250 nA to 300 µA
Capacitance:
100 to 1500 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
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Description: Silicon Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
30 to 38 A/W
Package Type:
TO-Can, Ceramic, Surface Mount, Submount
more info
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Description: Silicon PIN Photodiode Array
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 180 pA
Capacitance:
1.7 to 5.5 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
more info
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Description: Silicon photodiode from 200 to 1100 nm
Description: AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
Description: TO-Can photodiode from 3.8 to 4.2 µm
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Description: Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
Description: 1.8mm Round Subminiature Silicon PIN Photodiode
Description: Silicon PIN photodiode from 430 to 1100 nm
901 - 915 of 2551 Photodiodes
Photodiode companies
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