Photodiodes - Page 58
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
Ceramic, Chip
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
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Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 15 nA to 86 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
15 nA to 86 µA
Capacitance:
15 to 165 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
DIP / DIL / Thru-Hole
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 500um
Description: Silicon Avalanche photodiode from 550 to 1050 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
550 to 1050 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
45 A/W
Package Type:
TO-Can, Ceramic, Surface Mount, Submount
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Description: Thermoelectrically Cooled InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
600 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 nA
Capacitance:
300 to 1200 pF
Responsivity/Photosensitivity:
0.20 to 0.95 A/W
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Description: PIN Photodiode
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 180 pA
Capacitance:
4.40 to 9.46 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
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Description: Silicon photodiode from 400 to 1100 nm
Description: Electron & Photon Detectors (AXUV Family) X-Ray and Radiation
Description: TO-Can photodiode from 3.55 to 4.50 µm
Description: 500 µm Diameter Circular Active Area Avalanche Photodiode with Surface Mount package
Description: 1mm InGaAs PIN Photodiode TO5
Description: Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area, FC/PC Bulkhead
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.48 A/W
Package Type:
Through-Hole, Connectorized
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856 - 870 of 2551 Photodiodes
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