Photodiodes - Page 56
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 1000 nm Nd-YAG Silicon Photodiode for Laser Positioning Applications
Description: 200 to 380 nm SiC Photodiode with 0.13 A/W Responsitvity
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
200 to 380 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 1 nA
Responsivity/Photosensitivity:
0.13 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 µA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
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Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 850 nA to 830 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
850 nA to 830 µA
Capacitance:
450 to 3000 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
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Description: InGaAs PIN Photodiode Chip on Ceramic, Active Area 300um
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Responsivity/Photosensitivity:
0.88 to 0.98 A/W
Package Type:
Chip on Ceramic
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Description: Silicon Avalanche photodiode from 400 to 1000 nm
Description: Thermoelectrically Cooled InGaAs Photodiodes
Description: UV Enchanced Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 480 pA
Capacitance:
16 to 118 pF
Responsivity/Photosensitivity:
0.14 to 0.51 A/W
Package Type:
Surface Mount
more info
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Description: InGaAs PIN Photodiode from 800 to 1700 nm
Description: EUV & UV Detectors (SXUV & UVG Family)
Description: TO-Can photodiode from 3.55 to 4.50 µm
Description: 4 x 12 mm2 Active Area Quadrant PIN photodiode with TO-Can package
826 - 840 of 2551 Photodiodes
Photodiode companies
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