Photodiodes - Page 60
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: SILICON QUADRANT PHOTODIODE
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 390 pA
Capacitance:
30 to 110 pF
Responsivity/Photosensitivity:
0.57 to 0.64 A/W
more info
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Description: InGaAs Avalanche Photodiode from 1100 to 1700 nm
Description: EUV & UV Detectors (SXUV & UVG Family)
Description: TO-Can photodiode from 1.85 to 2.30 µm
Description: 0.2 mm2 Active Area Avalanche Photodiode with Surface Mount package
Description: Si photodetector (TO package)
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
more info
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Description: 900 to 1700 nm KP-E Edge Illuminated InGaAs Photodiodes with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 300 pA
Capacitance:
0.85 to 1.2 pF
Responsivity/Photosensitivity:
0.5 to 0.8 A/W
more info
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Description: Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area
Description: Silicon Planar PIN Photodiode
Description: 400 to 1000 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.5 A/W
more info
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Description: Silicon PIN Photodiode from 780 to 1050 nm
Description: Chip photodiode from 450 to 1050 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Description: GaAs PIN photodiode from 770 to 860 nm
886 - 900 of 2551 Photodiodes
Photodiode companies
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