Photodiodes - Page 59
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: High speed and high sensitive PIN photodiode in miniature flat top view lens SMD package
Description: Blue Enhanced Response, 100.0mm2, Silicon Detector
Description: Silicon PIN photodiode from 640 to 1060 nm
Description: 0.95 to 1.7 µm Near-Infrared TO-18 InGaAs Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.95 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
20 to 50 nA
Responsivity/Photosensitivity:
0.65 to 0.8 A/W
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Description: Silicon PIN Photodiode from 780 to 1050 nm
Description: Silicon PIN photodiode from 450 to 1050 nm
Description: Silicon PIN photodiode from 750 to 1100 nm
Description: InGaAs PIN photodiode from 1260 to 1620 nm
Description: 0.5 mm Diameter Active Area InGaAs Photodiode
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
700 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 µA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
more info
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
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Description: 2 to 13 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 200 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Capacitance:
280 to 960 pF
Responsivity/Photosensitivity:
1.07 A/W
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Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Capacitance:
1000 to 3000 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
more info
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871 - 885 of 2551 Photodiodes
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