Photodiodes - Page 63

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Series E Eye Response Detectors
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 10 nA
Capacitance:
80 to 390 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Electron & Photon Detectors (AXUV Family) X-Ray and Radiation
Wavelength Range:
0.01 to 190 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
100 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: TO-Can photodiode from 2.42 to 2.43 µm
Wavelength Range:
2.42 to 2.43 µm
Operation Mode:
Photovoltaic
Dark Current:
30 to 60 µA
Capacitance:
160 to 200 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 75 µm Plugged InGaAs Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
0.3 to 0.5 nA
Capacitance:
0.7 to 1 pF
Responsivity/Photosensitivity:
0.85 to 0.90 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
14 pF (Terminal)
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
Description: Calibrated Si Photodiode, 350 - 1100 nm, 3.6 x 3.6 mm Active Area
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 nA
Capacitance:
24 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Side Face Silicon Phototransistor
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photovoltaic
Dark Current:
100 nA
Package Type:
Through-Hole
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
Chip
Module:
No
more info
Description: 0.95 to 1.7 µm Near-Infrared TO-18 InGaAs Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.95 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
90 to 140 nA
Capacitance:
0.7 to 1 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 750 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Surface Mount photodiode from 400 to 1100 nm
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 nA
Capacitance:
5.8 pF
Package Type:
Surface Mount
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 690 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 690 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
135 pF
Responsivity/Photosensitivity:
0.37 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
4 µA
Capacitance:
4000 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 220 to 320 nm GaN UV Photodiode with 0.12 A/W Responsitvity
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
220 to 320 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.12 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.90 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
931 - 945 of 2551 Photodiodes
Photodiode companies

Filters

X

Manufacturers from 

Photodetector Type 

Companies 

Photodiode Material 

Package Type 

Operation Mode 

Wavelength Range (nm)  

Capacitance (pF)  

Responsivity/Photosensitivity (A/W)  

Dark Current (nA)  

Channels 

Configuration 

Tags