Photodiodes - Page 62
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photops Photodiode-Amplifier Hybrids
Description: 320 to 1000 nm UV-VIS-NIR TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1.5 nA
Responsivity/Photosensitivity:
0.3 A/W
more info
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Description: Silicon PIN Photodiode from 780 to 1050 nm
Description: Silicon PIN photodiode from 700 to 1050 nm
Description: Silicon PIN photodiode from 730 to 1100 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Responsivity/Photosensitivity:
0.57 A/W
more info
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Description: 700 to 1700 nm Diameter InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
700 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 µA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
more info
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Description: 900 nm - 1700 nm, InGaAs Photodiode for Power Monitoring Applications
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
more info
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Description: HgCdTe ambient temperature photoconductive detector with anti-fringing technology
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 80 nA to 770 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
80 nA to 770 µA
Capacitance:
500 to 3100 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: InGaAs APD Preamplifier Module
Description: Silicon PIN Photodiode from 400 to 1100 nm
916 - 930 of 2551 Photodiodes
Photodiode companies
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