Photodiodes - Page 65
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Inversion Layer Photodiodes
Description: Silicon PIN Photodiode from 660 to 1050 nm
Description: PIN photodiode from 700 to 1050 nm
Description: Silicon PIN photodiode from 420 to 1120 nm
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 to 0.55 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
more info
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Description: 900 to 1700 nm Diameter InGaAs Photodiode with Surface Mount Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
75 to 100 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
Surface Mount
more info
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Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled photovoltaic detector
Description: 220 to 358 nm UV Detectors with 0.1 to 10 pA Dark Current
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
220 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 pA
Responsivity/Photosensitivity:
0.013 to 0.13 A/W
more info
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Selective wavelength photodiode
Description: Silicon PIN Photodiode from 650 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
650 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.05 nA
Responsivity/Photosensitivity:
0.47 A/W
Package Type:
Through-Hole
more info
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Description: BXF Series - Uncooled PbSe Flat Plate IR Detectors
Description: TO-Can photodiode from 2.2 to 3.4 µm
Description: 16 mm SI Quadrant PIN Detector with TO-Can package
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
1 to 100 µA
Capacitance:
5 pF (Junction)
Responsivity/Photosensitivity:
0.3 A/W
more info
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961 - 975 of 2551 Photodiodes
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