Photodiodes - Page 70

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Soft X-Ray, Far UV Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.3 to 0.5 nF
Package Type:
TO-Can
Channels:
Single
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
160 pA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Calibrated Si Photodiode, 350 - 1100 nm, 10 x 10 mm Active Area
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
600 nA
Capacitance:
375 pF
Responsivity/Photosensitivity:
0.725 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: High speed and high sensitive PIN photodiode in a standard 3F plastic package.
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
5 pF
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 950 to 1680 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
950 to 1680 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
170 pF
Responsivity/Photosensitivity:
0.8 A/W
Package Type:
Chip
Module:
No
more info
Description: 440 to 1100 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.5 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 350 to 1070 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1070 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 10 nA
Capacitance:
35 to 80 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 730 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
730 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
13 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: 850 nm GaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.1 to 0.12 pF
Responsivity/Photosensitivity:
0.55 to 0.6 A/W
Package Type:
Chip
Configuration:
Array
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 µA
Capacitance:
85 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 45 mm Solderable Chip Silicon Photodiode with Wire
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 µA
Capacitance:
1.5 nF
Responsivity/Photosensitivity:
0.63 A/W
Package Type:
Chip, Die
Module:
No
more info
Description: Multi Channel X-Ray Detectors and Photoconductive Arrays
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
9 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.1 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 100 nA to 105 µA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA to 105 µA
Capacitance:
20 to 140 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
220 to 360 nm
Operation Mode:
Photoconductive
Dark Current:
0.07 fA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.085 to 0.130 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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