Photodiodes - Page 74

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 2 nA
Capacitance:
4.9 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2.75 x5.25mm Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
18 pF
Package Type:
Through-Hole
Module:
No
more info
Description: Silicon PIN photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 nA
Capacitance:
19 pF
Package Type:
Chip
Module:
No
more info
Description: 320 to 1000 nm UV-VIS-NIR TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.8 pF
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 350 to 1120 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 3 nA
Capacitance:
1.2 to 3.3 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 750 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
11 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 1.5 nA
Capacitance:
80 to 500 pF
Responsivity/Photosensitivity:
0.10 to 0.55 mA/mW
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
4 to 15 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 42.7 mm Photovoltaic Solderable Silicon Photodiode with Die Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
50 to 100 nA
Capacitance:
5500 pF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Description: Nd-YAG Optimized Photodiodes
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 250 nA
Capacitance:
1 to 5 pF
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
Channels:
Quad
Module:
No
more info
Description: Type II superlattice, three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
8 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.12 to 75 nA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 75 nA
Capacitance:
55 to 75 pF
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.02 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 200 pA
Capacitance:
72 to 812 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1150 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
18 nA
Capacitance:
24 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
1096 - 1110 of 2551 Photodiodes
Photodiode companies

Filters

X

Manufacturers from 

Photodetector Type 

Companies 

Photodiode Material 

Package Type 

Operation Mode 

Wavelength Range (nm)  

Capacitance (pF)  

Responsivity/Photosensitivity (A/W)  

Dark Current (nA)  

Channels 

Configuration 

Tags