Photodiodes - Page 74
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Description: 2.75 x5.25mm Silicon PIN Photodiode
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: 320 to 1000 nm UV-VIS-NIR TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.3 A/W
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Description: Silicon PIN Photodiode from 350 to 1120 nm
Description: Silicon PIN photodiode from 750 to 1100 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 1.5 nA
Capacitance:
80 to 500 pF
Responsivity/Photosensitivity:
0.10 to 0.55 mA/mW
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
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Description: 42.7 mm Photovoltaic Solderable Silicon Photodiode with Die Package
Description: Nd-YAG Optimized Photodiodes
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 250 nA
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: Type II superlattice, three-stage thermoelectrically cooled, optically immersed photoconductive detector
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.12 to 75 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 75 nA
Responsivity/Photosensitivity:
0.74 A/W
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.02 to 0.95 A/W
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Description: Silicon PIN Photodiode
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 200 pA
Capacitance:
72 to 812 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
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Description: Silicon photodiode from 400 to 1150 nm
1096 - 1110 of 2551 Photodiodes
Photodiode companies
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