Photodiodes - Page 72
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Back Illuminated InGaAs Photodiode / Arrays
Description: Large Active Area InGaAs Quadrants
Description: 2.4 to 4.3 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 300 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Capacitance:
85 to 1000 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.001 to 0.003 A/W
Package Type:
Through-Hole
more info
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Description: Broad-band GaN-based UV photodiode
Description: Silicon photodiode from 330 to 720 nm
Description: AP Series - Uncooled PbS Packaged IR Detectors
Description: TO-Can photodiode from 1.65 to 2.35 µm
Description: 5 mm Ge Photodiode with TO-8 package
Description: 900 to 1700 nm InGaAs Photodiodes with TO-Can package
Description: InGaAs Photodiode, 25 ns Rise Time, 800-2600 nm, Ø1.0 mm Active Area
Description: 1206 Package Silicon PIN Photodiode
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: 320 to 1000 nm UV-VIS-NIR TO-8 Silicon Photoconductive Photodiode
1066 - 1080 of 2551 Photodiodes
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