Photodiodes - Page 71
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic
Description: Silicon PIN Photodiode
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 1000 pA
Capacitance:
92 to 515 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
more info
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Description: Silicon photodiode from 400 to 1150 nm
Description: AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
Description: TO-Can photodiode from 3.5 to 4 µm
Description: 16 mm SI Quadrant PIN Detector with TO-Can package
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
1 to 100 µA
Capacitance:
5 pF (Junction)
Responsivity/Photosensitivity:
0.3 A/W
more info
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Description: 400 to 1000 nm (Silicon), 900 to 1700 nm (InGaAs) KP-2 Two-tone Photodiodes with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Wavelength Range:
400 to 1000 nm (Silicon), 900 to 1700 nm (InGaAs)
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA (Silicon), 1 to 10 nA (InGaAs)
Capacitance:
30 to 50 pF (Silicon), 45 to 60 pF (InGaAs)
Responsivity/Photosensitivity:
0.5 to 0.7 A/W (Silicon), 0.7 to 0.9 A/W (InGaAs)
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Description: Ge Photodiode, 500 ns Rise Time, 800 - 1800 nm, Ø3 mm Active Area
Description: High speed and high sensitive NPN silicon phototransistor molded in a standard f3 mm package.
Description: Silicon PIN photodiode from 610 to 1080 nm
Description: 440 to 1100 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Responsivity/Photosensitivity:
0.52 A/W
more info
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Description: Silicon PIN Photodiode from 750 to 1050 nm
Description: Silicon PIN photodiode from 300 to 1100 nm
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
more info
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
30 to 250 nA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
more info
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Description: 2 mm Diameter InGaAs Quadrant Segmented Photodiodes with TO-5 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 10 nA
Responsivity/Photosensitivity:
0.64 to 0.92 A/W
more info
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1051 - 1065 of 2551 Photodiodes
Photodiode companies
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