Photodiodes - Page 77
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages
Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Description: 250 to 1100 nm Silicon Photodetectors with 0.05 to 0.5 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.22 to 0.4 A/W
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Description: Silicon Avalanche photodiode from 1100 to 1700 nm
Description: Selective wavelength photodiode
Description: Silicon PIN Photodiode from 400 to 1100 nm
Description: AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
Description: 10 mm InGaAs Ultra Large Active Area PIN Detector
Description: 900 to 1700 nm Thermoelectrically Cooled InGaAs Photodiodes with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
45 to 60 pF (Terminal)
Responsivity/Photosensitivity:
0.8 to 1 A/W
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Description: 190 to 1000 nm UV-VIS-NIR Ceramic Silicon Photoconductive Photodiode
Description: Silicon PIN Photodiode from 870 to 1050 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
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Photodiode Material:
InGaAs
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
200 to 500 nA
Capacitance:
2500 to 1000 pF
Responsivity/Photosensitivity:
0.10 to 0.95 A/W
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Description: 41.3 mm Photoconductive Solderable Chip Silicon Photodiode with Wire
1141 - 1155 of 2551 Photodiodes
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