Photodiodes - Page 80

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.25 to 3 nA
Capacitance:
15 to 85 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 730 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
730 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
48 pF
Responsivity/Photosensitivity:
0.63 A/W
Package Type:
DIL, Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
2 µm
Operation Mode:
Photoconductive
Dark Current:
1 µm
Capacitance:
90 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 69 mm Solderable Die Siliocon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 700 nm
Operation Mode:
Photovoltaic
Dark Current:
350 to 700 nA
Capacitance:
28 to 1150 nF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Description: Multi Channel X-Ray Detectors and Photoconductive Arrays
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
340 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 1 to 14 µm HgCdTe two-stage thermoelectrically cooled photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
13 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.002 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 800 to 2600 nm Quadrant and Array Photodiodes with 120 nA to 100 µA Dark Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photovoltaic
Dark Current:
120 nA to 100 µA
Capacitance:
20 to 150 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
Configuration:
Array
Channels:
Quad
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
700 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
231 to 309 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 fA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.125 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
40 to 800 pA
Capacitance:
8.2 to 33 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1150 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
11 to 20 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
0.44 to 0.70 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: BXT1 Series - One Stage Cooled PbSe Packaged IR Detectors
Photodiode Material:
Pbse
Wavelength Range:
4 to 4.2 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 75 µm InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
0.3 to 0.5 nA
Capacitance:
0.7 to 1 pF
Responsivity/Photosensitivity:
0.85 to 0.90 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 1310 to 1550 nm KP-A InGaAs Avalanche Photodiodes with TO-Can package
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 nA
Capacitance:
0.38 to 0.8 pF
Responsivity/Photosensitivity:
0.85 to 1.05 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon Planar PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Package Type:
Surface Mount
Module:
No
more info
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