Photodiodes - Page 84

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Tetra-Lateral PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photovoltaic
Dark Current:
0.25 to 250 nA
Capacitance:
3900 pF
Responsivity/Photosensitivity:
0.35 to 0.42 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: High speed Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.30 to 1 nA
Capacitance:
3.1 to 10.1 pF
Responsivity/Photosensitivity:
0.15 to 0.44 A/W
Package Type:
Leaded
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 250 nA
Capacitance:
12 to 20 pF
Responsivity/Photosensitivity:
0.1 to 0.20 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 1 mm2 Photodiode in TO-18 Pkg
Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.2 to 2 pF
Responsivity/Photosensitivity:
0.36 to 0.4 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 200 µm InGaAs APD Photodiodes In TO46 Package
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
20 to 30 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 400 to 1000 nm KP-A Si Avalanche Photodiodes with TO-Can package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 1000 pA
Capacitance:
5.5 to 7 pF
Responsivity/Photosensitivity:
0.4 to 0.45 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Chip Photodiode with Right Angle Lens
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
875 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
3 pF
Package Type:
Surface Mount
Module:
No
more info
Description: 320 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 6 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.24 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 380 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
380 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 5 nA
Capacitance:
3.8 to 11 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 780 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
72 pF
Responsivity/Photosensitivity:
0.7 A/W
Package Type:
DIL, Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Capacitance:
2.1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
50 µA
Capacitance:
30000 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 0.25 mm Diameter InGaAs Photodiode
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
2000 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
4 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 800 to 2600 nm Quadrant and Array Photodiodes with 23 to 72 µA Dark Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
23 to 72 µA
Capacitance:
60 to 750 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
Configuration:
Array
Channels:
Quad
Module:
No
more info
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