Photodiodes - Page 84
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Tetra-Lateral PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Operation Mode:
Photovoltaic
Dark Current:
0.25 to 250 nA
Responsivity/Photosensitivity:
0.35 to 0.42 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: High speed Photodiode
Photodiode Material:
Silicon
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.30 to 1 nA
Capacitance:
3.1 to 10.1 pF
Responsivity/Photosensitivity:
0.15 to 0.44 A/W
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Description: Silicon PIN Photodiode from 400 to 1100 nm
Description: 1 mm2 Photodiode in TO-18 Pkg
Description: 200 µm InGaAs APD Photodiodes In TO46 Package
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
20 to 30 nA
Responsivity/Photosensitivity:
9 A/W
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Description: 400 to 1000 nm KP-A Si Avalanche Photodiodes with TO-Can package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 1000 pA
Responsivity/Photosensitivity:
0.4 to 0.45 A/W
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Description: Chip Photodiode with Right Angle Lens
Description: 320 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 6 nA
Responsivity/Photosensitivity:
0.24 A/W
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Description: Silicon PIN Photodiode from 380 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
380 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 5 nA
Capacitance:
3.8 to 11 pF
Responsivity/Photosensitivity:
0.55 A/W
more info
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Description: Silicon PIN photodiode from 780 to 1100 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Responsivity/Photosensitivity:
0.57 A/W
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Description: 0.25 mm Diameter InGaAs Photodiode
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Description: Photovoltaic Devices
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic detector
Description: 800 to 2600 nm Quadrant and Array Photodiodes with 23 to 72 µA Dark Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
23 to 72 µA
Capacitance:
60 to 750 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
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1246 - 1260 of 2551 Photodiodes
Photodiode companies
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