Photodiodes - Page 88

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Series E Eye Response Detectors
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
20 to 80 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2.4 to 5.3 µm InAs and InAsSb ambient temperature, optically immersed photovoltaic detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
4.5 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 400 to 1100 nm Quadrant and Array Photodiodes with 0.5 to 1 nA Dark Current
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
3.5 to 25 pF
Responsivity/Photosensitivity:
0.22 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Quad
Module:
No
more info
Description: 400 nm - 1000 nm, Si Avalanche Photodiode for Spectroscopy Applications
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
GaP, InGaAs, InP
Operation Mode:
Photoconductive
Dark Current:
250 to 1000 pA
Capacitance:
45 pF
Responsivity/Photosensitivity:
0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Large active area Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
80 to 760 pA
Capacitance:
150 to 790 pF
Responsivity/Photosensitivity:
0.37 to 0.66 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
<5 to 10 nA
Capacitance:
<120 pF
Responsivity/Photosensitivity:
0.70 A/W
Package Type:
Chip
Configuration:
Array
Module:
No
more info
Description: 12 mm2 Photodiode in TO-8 Hermetic Pkg
Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 7 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with TO-Can package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
250 pF (Terminal)
Package Type:
TO-Can
Module:
No
more info
Description: 5mm Silicon PIN Photodiode , T-1 3/4
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
18 pF
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: 400 to 1000 nm VIS-NIR TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 780 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
17 to 48 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 420 nm - 1120 nm, Silicon PIN Photodiode for Industrial Automation
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
420 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
72 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 µm
Capacitance:
1000 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 5 mm Diameter Active Area InGaAs Photodiode with TO-8 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
2000 nA
Capacitance:
1100 pF
Responsivity/Photosensitivity:
0.3 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
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