Photodiodes - Page 90

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
150 to 1000 nA
Capacitance:
125 to 150 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: 231.6 mm Active Area Photconductive Silicon Photodiode with Die Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
950 nm
Operation Mode:
Photoconductive
Dark Current:
230 nA
Capacitance:
775 pF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Description: 400 nm - 1100 nm, Nd:YAG Optimized Silicon Photodiode for Pointing Applications
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 100 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
Channels:
Quad
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
4 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 350 to 1100 nm Quadrant and Array Photodiodes with 0.5 to 5 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
25 to 140 pF
Responsivity/Photosensitivity:
0.4 to 0.64 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Quad
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
2 to nA
Capacitance:
40 to 160 pF
Responsivity/Photosensitivity:
0.02 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs photodiode Array
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
4 pF
Responsivity/Photosensitivity:
0.95 to 1.10 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
72 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 5 mm2 Photodiode in TO-5 Hermetic Pkg
Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with Surface Mount package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 nA
Capacitance:
30 pF (Terminal)
Package Type:
Surface Mount
Module:
No
more info
Description: 1.9mm Round Subminiature- Z-Bend- Lead Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Package Type:
Surface Mount
Module:
No
more info
Description: 320 to 1000 nm Visible TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 15 nA
Capacitance:
22 pF
Responsivity/Photosensitivity:
0.24 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 550 to 1040 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
550 to 1040 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
2.5 to 7 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
0.5 µA
Capacitance:
1450 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 14.9 mm Active Area Photconductive Silicon Photodiode with Die Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
950 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
125 pF
Responsivity/Photosensitivity:
0.7 A/W
Package Type:
Die
Module:
No
more info
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