Photodiodes - Page 91

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Soft X-Ray, Far UV Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
2 to 3 nF
Package Type:
TO-Can
Channels:
Single
Module:
No
more info
Description: High Speed InGaAs Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic, Submount
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
13 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.01 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 350 to 1100 nm Quadrant and Array Photodiodes with 0.5 to 5 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
42 to 220 pF
Responsivity/Photosensitivity:
0.4 to 0.64 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Quad
Module:
No
more info
Description: InGaAs Avalanche photodiode from 1000 to 1630 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 250 nA
Capacitance:
4.1 to 4.6 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
Ceramic, Submount, TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
600 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
2 to nA
Capacitance:
75 to 300 pF
Responsivity/Photosensitivity:
0.20 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: SUNLIGHT SENSITIVE photo diode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
300 to 900 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 pA
Capacitance:
120 to 190 pF
Responsivity/Photosensitivity:
0.25 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
1 nF
Responsivity/Photosensitivity:
0.10 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: EUV & UV Detectors (SXUV & UVG Family)
Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Capacitance:
200 to 800 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1310 to 1550 nm KP-A InGaAs Avalanche Photodiodes with TO-Can package
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 65 nA
Capacitance:
0.54 to 1.1 pF
Responsivity/Photosensitivity:
0.8 to 1.05 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 4.8mm Semi-Lens Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon, GaAIAs
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
25 pF
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: 400 to 1100 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
1.5 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 790 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
790 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: 1300 nm InGaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.7 to 0.8 pF
Responsivity/Photosensitivity:
0.9 A/W
Package Type:
Chip
Configuration:
Array
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
20 µA
Capacitance:
270 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 231.6 mm Very Large Solderable Die Silicon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
350 to 700 nA
Capacitance:
775 to 1150 pF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
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