Photodiodes - Page 96
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
30 to 70 nA
Capacitance:
130 to 1000 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: Silicon Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
45 to 50 A/W
Package Type:
Surface Mount
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Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3600 to 4100 nm
Operation Mode:
Photovoltaic
Capacitance:
1300 to 2600 pF
Responsivity/Photosensitivity:
0.6 to 1.2 A/W
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Description: One Direction Position Sensing Detecto
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA to 12.8 nA
Capacitance:
5.45 to 11.7 pF
Responsivity/Photosensitivity:
0.27 to 0.51 A/W
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Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
225 to 500 pA
Capacitance:
0.097 to 2 nF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
Through-Hole
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Description: AP Series - Uncooled PbS Packaged IR Detectors
Description: 1200 to 2300 nm InGaAs NIR Photodiode with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1200 to 2300 nm
Operation Mode:
Photovoltaic
Capacitance:
20 pF (Terminal)
Responsivity/Photosensitivity:
1 A/W
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Description: 190 to 1000 nm UV-VIS-NIR Ceramic Silicon Photoconductive Photodiode
Description: Silicon PIN Photodiode from 740 to 1040 nm
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
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Description: 20.5 mm Active Area Photconductive Silicon Photodiode with Die Package
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: 8 µm HgCdTe Based IR Photodiode
Description: 250 to 1100 nm Silicon Photodetectors with 0.1 to 1 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.22 to 0.4 A/W
Package Type:
Surface Mount
more info
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Description: Silicon Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
45 to 50 A/W
Package Type:
Surface Mount
more info
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1426 - 1440 of 2551 Photodiodes
Photodiode companies
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