Photodiodes - Page 97

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
2000 to 175 nA
Capacitance:
600 to 14 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photovoltaic
Dark Current:
250 nA
Capacitance:
20 to 30 pF
Responsivity/Photosensitivity:
22 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: 42 mm2 Photodiode in TO-8 Hermetic Pkg
Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
11 to 25 nA
Capacitance:
85 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 400 to 1100 nm Si Photodiodes with Surface Mount package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
7 pF (Terminal)
Package Type:
Surface Mount
Module:
No
more info
Description: 320 to 1100 nm VIS-NIR Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.33 to 0.58 A/W
Package Type:
DIP / DIL / Thru-Hole
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 350 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
20 to 50 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
40 µA
Capacitance:
3000 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 1100 to 1700 nm InGaAs Quadrant Segmented Photodiodes with Surface Mount Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 10 nA
Capacitance:
125 pF
Responsivity/Photosensitivity:
1 A/W
Package Type:
Surface Mount
Channels:
Quad
Module:
No
more info
Description: Blue Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
436 nm
Operation Mode:
Photovoltaic
Dark Current:
10 nA
Capacitance:
390 pF
Responsivity/Photosensitivity:
0.18 to 0.21 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
3 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 850 to 1060 nm Silicon Photodetectors with 10 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
850 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
6 to 12 pF
Responsivity/Photosensitivity:
0.44 A/W
Package Type:
Leaded
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Selective wavelength photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 11 pA
Capacitance:
51 to 67 pF
Responsivity/Photosensitivity:
0.45 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN Photodiode from 1300 to 1500 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1500 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 2 nA
Capacitance:
0.45 to 1 pF
Responsivity/Photosensitivity:
0.65 to 0.90 A/W
Package Type:
TO-Can Pigtail, Ceramic
Configuration:
Single
Module:
No
more info
Description: AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
Photodiode Material:
Pbse
Wavelength Range:
4.1 to 4.3 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
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