Photodiodes - Page 53

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Blue Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
436 nm
Operation Mode:
Photovoltaic
Dark Current:
2 nA
Capacitance:
130 pF
Responsivity/Photosensitivity:
0.18 to 0.21 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: UV / Visible Sensor
Photodetector Type:
PN
Photodiode Material:
Silicon, InGaN
Wavelength Range:
345 to 450 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Responsivity/Photosensitivity:
0.68 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: UV Enhanced Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 120 pA
Capacitance:
46 to 212 pF
Responsivity/Photosensitivity:
0.21 to 0.40 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InP Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InP
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
45 to 150 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Near IR Reduced Footprint Photodiode
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.75 nA
Capacitance:
8 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: TO-Can photodiode from 2.45 to 3.30 µm
Wavelength Range:
2.45 to 3.30 µm
Operation Mode:
Photovoltaic
Dark Current:
150 to 600 µA
Capacitance:
200 to 300 pF
Responsivity/Photosensitivity:
0.7 to 0.8 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 4 x 0.25 mm2 Circular Active Area Quadrant PIN photodiode with TO-Can package
Photodetector Type:
PIN
Wavelength Range:
632 nm / 905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.5 nA
Capacitance:
0.75 to 5 pF
Responsivity/Photosensitivity:
0.4 to 0.64 A/W
Package Type:
TO-Can
Channels:
Quad
Module:
No
more info
Description: 2mm Extended InGaAs Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 2700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
320 µA
Capacitance:
100 to 10000 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 370 x 370 mils Active area PIN Silicon photodiode with Chip package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Operation Mode:
Photoconductive
Dark Current:
30 nA
Package Type:
Chip
Module:
No
more info
Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
160 pA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
Package Type:
TO-Can
Module:
No
more info
Description: Si Photodiode, 150 ns Rise Time, 340 - 1100 nm, 10 mm x 10 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
200 pA
Capacitance:
380 pF
Responsivity/Photosensitivity:
0.62 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Side Face Silicon Phototransistor
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photovoltaic
Dark Current:
100 nA
Package Type:
Through-Hole
Module:
No
more info
Description: Normal Response, 0.81mm2, Silicon Detector
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 nA
Capacitance:
8 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
TO-Can, Leaded
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 350 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
30 to 90 pF
Package Type:
Chip
Module:
No
more info
Description: 320 to 1000 nm UV-VIS-NIR TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 3 nA
Capacitance:
4 pF
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
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