Photodiodes - Page 50
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 155Mbps/622Mbps/1.25Gbps/2.5Gbps High Speed InGaAs Photodiodes
Description: Silicon PIN Photodiode from 590 to 1010 nm
Description: Silicon PIN photodiode from 720 to 1100 nm
Description: Silicon PIN photodiode from 350 to 820 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Responsivity/Photosensitivity:
0.57 A/W
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Description: 220 to 370 nm GaN UV Photodiode with TO-46 Package
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
220 to 370 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 100 pA
Responsivity/Photosensitivity:
0.18 A/W
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Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 µA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
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Description: 350 to 1100 nm Quadrant Backscatter Photodiodes with TO-5 Package
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 120 nA to 100 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
120 nA to 100 µA
Capacitance:
20 to 150 pF
Responsivity/Photosensitivity:
1.24 A/W
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 55um
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.3 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
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Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Responsivity/Photosensitivity:
50 A/W
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Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 200 nA
Capacitance:
100 to 500 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
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Description: This PIN-photodiode consists of a large chip with 1.3x1.3mm active area mounted on the TO-46 stem and is hermetical sealed by metal can with ball lens
736 - 750 of 2551 Photodiodes
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