Photodiodes - Page 48
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Arrays
Description: TO-Can Silicon photodiode from 450 to 1050 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Description: 240 to 370 nm GaN UV Photodiode with Surface Mount Package
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
240 to 370 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Responsivity/Photosensitivity:
0.14 A/W
Package Type:
Surface Mount
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: 350 to 1100 nm PIN Photodiodes with DIP / DIL / Thru-Hole Package
Description: 1 to 14 µm HgCdTe two-stage thermoelectrically cooled photoconductive detector
Description: 220 to 358 nm UV Detectors with 0.1 to 10 pA Dark Current
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
220 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 pA
Responsivity/Photosensitivity:
0.013 to 0.13 A/W
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Description: Fiber coupled InGaAs PIN photodiodes, SMF-28 fiber, 2.5GHz cut-off frequency, NO connector
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Coaxial Pigtail
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Description: InGaAs Avalanche photodiode from 900 to 1700 nm
Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
200 to 500 nA
Capacitance:
250 to 1000 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
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Description: This PIN-photodiode consists of a large chip with 2.0x2.0mm active area mounted on the TO-46 stem and is hermetical sealed by metal can with ball lens
706 - 720 of 2551 Photodiodes
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