Photodiodes - Page 45
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Description: Schottky-type Photodiode from 220 to 280 nm
Photodetector Type:
Schottky
Photodiode Material:
AlGaN
Wavelength Range:
220 to 280 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.07 A/W
Package Type:
Surface Mount
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Description: Visible Sensitive Photodiode
Description: Silicon PIN Photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.2 nA
Responsivity/Photosensitivity:
0.47 A/W
Package Type:
Through-Hole
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Description: 1 mm2 Photodiode in TO-18 Pkg
Description: TO-Can photodiode from 3.8 to 4.2 µm
Description: InGaAs PIN photodiode from 1260 to 1360 nm
Description: 50 mm2 Active Area Quadrant PIN Photodiode with TO-Can package
Description: Si photodetector (TO package)
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
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Description: 0.25 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
75 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
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Description: Si Photodiode, 1 ns Rise Time, 200 - 1100 nm, Ø1 mm Active Area
Description: 3mm Photodiode
Description: InGaAs Detector, 3000µm Dia, TO-5, 20Mohm Shunt
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Capacitance:
750 to 1800 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can, Leaded
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Description: Silicon PIN photodiode from 430 to 1100 nm
Description: 400 to 1000 nm Visible TO-8 Silicon Photoconductive Photodiode
Description: Silicon PIN Photodiode from 350 to 1120 nm
661 - 675 of 2551 Photodiodes
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