Photodiodes - Page 43
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photops Photodiode-Amplifier Hybrids
Description: TO-Can photodiode from 1.65 to 2.35 µm
Description: InGaAs Avalanche photodiode from 1260 to 1640 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1640 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
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Description: 0.2 mm2 Active Area Avalanche Photodiode with TO-Can package
Description: Si photodetector (TO package)
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
Package Type:
Coaxial Pigtail
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Description: 1010 nm PD series photodiode with Chip, PCB Package
Description: 70 x 70 mils Active area PIN Silicon photodiode with Chip package
Description: InGaAs PIN Photodiode 10 GHz 10 mW 1000-1650 nm - SM PM - COAXIAL
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Capacitance:
0.25 to 0.3 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Coaxial Pigtail
more info
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Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 400 pA
Responsivity/Photosensitivity:
0.8 to 1 A/W
more info
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Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
13 to 20 pF (Junction)
Responsivity/Photosensitivity:
0.18 to 0.16 A/W
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Description: 400 ns Rise Time, 320 - 1100 nm, 1.1 mm x 1.1 mm Active Area Si Photodiode
Description: 1206 Package Silicin PIN Photodiode
Description: Blue Enhanced Response, 5.1mm2, Silicon Detector
Description: Silicon PIN photodiode from 950 to 1680 nm
Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Responsivity/Photosensitivity:
0.5 A/W
more info
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Description: Silicon PIN Photodiode from 610 to 1080 nm
631 - 645 of 2551 Photodiodes
Photodiode companies
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