Photodiodes - Page 40
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photovoltaic Devices
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Description: 350 to 1100 nm Quadrant Backscatter Photodiodes with TO-Can Package
Description: HgCdTe ambient temperature photovoltaic detector with anti-fringing technology
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.025 to 16 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.025 to 16 nA
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 75um
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.63 to 0.75 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Description: This PIN-photodiode consists of a large chip with 0.8x0.8mm active area mounted on a lead frame with a F5 clear epoxy lens
Description: Silicon PIN Photodiode
Description: InGaAs Avalanche Photodiode from 1000 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
60 to 150 nA
Responsivity/Photosensitivity:
9.4 A/W
Package Type:
Surface Mount
more info
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Description: EUV & UV Detectors (SXUV & UVG Family)
Description: TO-Can photodiode from 2.42 to 2.43 µm
Description: InGaAs PIN photodiode from 1850 to 2050 nm
586 - 600 of 2551 Photodiodes
Photodiode companies
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