Photodiodes - Page 36

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: InGaAs Photodiode, 10 ns Rise Time, 900-1700 nm, Ø1 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
1.1 nA
Capacitance:
80 pF
Responsivity/Photosensitivity:
1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Near IR Reduced Footprint Photodiode
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.75 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.35 to 0.62 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: TO-Can photodiode from 2.2 to 3.4 µm
Wavelength Range:
2.2 to 3.4 µm
Operation Mode:
Photovoltaic
Dark Current:
120 to 1000 µA
Capacitance:
600 to 1100 pF
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 0.16 nA
Capacitance:
0.65 to 1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
Coaxial
Module:
No
more info
Description: Blue Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
436 nm
Operation Mode:
Photovoltaic
Dark Current:
30 nA
Capacitance:
2500 pF
Responsivity/Photosensitivity:
0.18 to 0.21 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 230 µm Diameter Circular Active Area Avalanche Photodiode with TO-Can package
Photodetector Type:
Avalanche
Wavelength Range:
750 to 910 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
52 to 58 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 400 nm - 1100 nm, Silicon PIN Photodetector for Sensing & Ranging Applications
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 60 nA
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
Package Type:
Four-Hole Mount
Configuration:
Single
Module:
No
more info
Description: 1010 nm PD series photodiode with Chip, PCB, Ceramic Package
Photodiode Material:
Silicon
Wavelength Range:
1010 nm
Operation Mode:
Photoconductive
Dark Current:
60 pA
Capacitance:
1200 pF
Responsivity/Photosensitivity:
0.2 to 0.8 A/W
Package Type:
Chip, PCB, Ceramic
Module:
No
more info
Description: 32 x 32 mils Active area PIN Silicon photodiode with Chip package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Operation Mode:
Photoconductive
Dark Current:
5 nA
Package Type:
Chip
Module:
No
more info
Description: Infrared detector PbS photoconductive detector Bondable bare chip
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
Bare Chip
Configuration:
Single
more info
Description: InGaAs PIN Photodiode 4 GHz 40 mW 500-1700 nm - SM PM - COAXIAL
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
500 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 1 nA
Capacitance:
0.4 to 0.6 pF
Responsivity/Photosensitivity:
0.07 to 0.8 A/W
Package Type:
Coaxial Pigtail
Configuration:
Single
more info
Description: 900 to 1700 nm InGaAs Photodiodes with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
45 to 60 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.05 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
30 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
Package Type:
TO-Can
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
610 to 770 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.5 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.58 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Package Type:
Surface Mount
Module:
No
more info
Description: Silicon PIN Photodiode for Signal Detection Applications
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.2 A/W
Package Type:
TO-Can, Leaded
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
5.2 pF
Package Type:
Chip
Module:
No
more info
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