Photodiodes - Page 32

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Calibrated Si Photodiode, 350 - 1100 nm, 10 x 10 mm Active Area
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
600 nA
Capacitance:
375 pF
Responsivity/Photosensitivity:
0.725 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 320 to 1000 nm UV-VIS-NIR Ceramic Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
9 pF
Package Type:
Ceramic
Configuration:
Array
Channels:
Multiple
more info
Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for LiDAR & Detection Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 nA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 770 to 1070 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
770 to 1070 nm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 3 nA
Capacitance:
1.2 to 3.3 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: TO-Can PIN photodiode from 450 to 1100 nm
Photodetector Type:
PIN
Wavelength Range:
450 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 µA
Capacitance:
16 pF
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 350 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
750 to 1800 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 2 nA
Capacitance:
4 to 7 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
25 nA
Capacitance:
150 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 400 to 1700 nm InGaAs Positive Sensitive Photodiode with TO-Can Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 150 nA
Capacitance:
130 to 400 pF
Responsivity/Photosensitivity:
0.26 to 1.06 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Large Area InGaAs PIN Photodiodes diameter of active area=500 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
8 to 15 nA
Capacitance:
15 to 25 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 350 to 720 nm PIN Photodiodes with Surface Mount Package
Photodetector Type:
PIN
Wavelength Range:
350 to 720 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
10 to 30 nA
Capacitance:
25 to 100 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Surface Mount
more info
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.17 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 1 nA to 43 µA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA to 43 µA
Capacitance:
20 to 150 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
Module:
No
more info
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