Photodiodes - Page 37
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Description: InGaAs PIN photodiode from 1100 to 1650 nm
Description: 400 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Responsivity/Photosensitivity:
0.5 A/W
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Description: 0.9 µm to 1.7 µm, InGaAs PIN Photodiode for Humidity & Gas Leak Detection Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
1800 to 2200 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
Ceramic, Chip
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Description: Calibrated Ge Photodiode, 800 - 1800 nm, Ø3.0 mm Active Area
Description: Silicon PIN Photodiode from 790 to 1050 nm
Description: Chip photodiode from 450 to 1050 nm
Description: Silicon PIN photodiode from 800 to 1100 nm
Description: InGaAs PIN photodiode from 800 to 1700 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
Ceramic, Chip
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Photodetector Type:
Avalanche
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photoconductive
Dark Current:
0.10 to 0.2 µA
Responsivity/Photosensitivity:
0.76 to 0.84 A/W
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Description: 210 to 280 nm GaN UV Photodiode with TO-46 Package
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
210 to 280 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Responsivity/Photosensitivity:
0.05 A/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: 970 nm Surface Mount Photodiodes with 7.25 mm Active Area
Description: 2.5 to 6.5 µm HgCdTe ambient temperature photovoltaic detector
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.03 to 57 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 57 nA
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
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541 - 555 of 2551 Photodiodes
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